| PART |
Description |
Maker |
| NR8360JP-BC |
InGaAs APD for OTDR applications. With FC-UPC connector.
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
NEC
CEL[California Eastern Labs]
|
| NR8360JP-BC |
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
California Eastern Laboratories
|
| NR8500 NR8500FR-BB-AZ NR8500FR-CB-AZ NR8500CP-BC-A |
CAP 1.0PF 25V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓APD的同轴包55字节/秒和622 Mb / s的应
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓砷APD的同轴包55字节/秒和622 Mb / s的应
NECs φ50 μm InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
California Eastern Laboratories, Inc.
California Eastern Labs
|
| G10519-14 |
InGaAs APD with preamp
|
Hamamatsu Corporation
|
| NR6800 |
80 um InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
|
California Eastern Labs
|
| FRM5W232FY |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| FU-319SPA-W6M20 319SPA-V6M20 319SPA-W6M20 319SPA-X |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55 UM的波长范
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| NR8500FR-CB-AZ NR8500 NR8500CP-BC-AZ NR8500CP-CC-A |
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
CEL[California Eastern Labs]
|
| NR4510UR-AZ |
NECs 050 um InGaAs APD ROSA WITH INTERNAL PRE-AMPLIFIER FOR 2.5 GB/S APPLICATIONS
|
California Eastern Laboratories
|
| C4777-01 |
APD module APD module integrated with peripheral circuits
|
Hamamatsu Corporation
|
| PD1310-XFA PD1320-VF PD1300-VFA PD1310-VSA PD1300- |
InGaAs PIN PD MODULES InGaAs PIN PHOTODIODE WITH 62.5/125 um MULTI-MODE PIGTAIL
|
Optoway Technology Inc
|
| PD-1320-VF PD-1320-VFA PD-1320-VS PD-1320-VSA PD-1 |
InGaAs PIN PD MODULES InGaAs PIN PHOTODIODE WITH GI-50 MULTI-MODE PIGTAIL
|
Optoway Technology Inc
|
